Advanced Nano- and Piezoelectric Materials and Their by Ivan A. Parinov

By Ivan A. Parinov

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The values of thickness of the oxide layers, formed on the surface of silicon carbide, are presented in Table 1. The table shows the effect of surface type on the oxidation rate. The capacitor dependencies of the samples under investigation are shown in Figure 8 – 11 [59]. The authors of [59] found the 6Н-SiC oxidation rate dependence on partial pressure of oxygen and water vapor. The oxidation was carried out within a pyrogen system, in which О2 and Н2 reacted inside a reaction chamber. A thermocouple-sensing element was used to measure the temperature during the oxidation process.

E. the rate of the flow, comprising water vapor and oxygen). For samples (1-4) from Table 2, there is an increase in oxide thickness with increasing the gas flow rate. However, the gas flow rate of sample 5 is lower than the one of samples 1-4, while the oxide is thicker. Thus, it may be concluded that the oxide thickness does not depend on the gas flow rate [62]. Apart from kinetic principles of silicon dioxide formation on SiC, dielectric material electrophysical characteristics are of great interest.

1. INTRODUCTION To achieve a higher integration, reliability, durability and quick response of integrated circuits, it is necessary to reduce the temperature and duration time of technological operations of oxide formation on semiconductor structure surfaces, which are implemented in the processing of the integrated circuits. ru. 20 V. V. Polyakov The most promising technique, providing the reduction of thermal operation duration time is rapid thermal annealing (RTA). The most wide-spread regime is a heat balance one with thermal annealing pulse duration from several seconds to tens of seconds, based on the use of infrared radiation halogen lamps.

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